NAND FLASH MEMORY ARRAY HAVING PILLAR TYPE SINGLE CRYSTAL CHANNEL AND VIRTUAL SOURCE/DRAIN AND FABRICATION METHOD OF THE SAME

摘要

PURPOSE: A nand flash memory array having pillar type single crystal channel and a virtual source/drain and fabrication method of the same are provided to simply implement a plurality of gates by repeatedly depositing and etching an insulating film and a conductive film. CONSTITUTION: In a nand flash memory array having pillar type single crystal channel and a virtual source/drain and fabrication method of the same, a column(12) is formed on a substrate(10). A common source area(40) is formed on the substrate between columns to form a first impurity doping layer. A lower selection gate(53) is formed on a common source region and the column while having a first insulating layer(24a) between them. A word line is formed on the lower selection gate and the column. An upper selection gate(75) is formed on a conductive layer(74) and each column while having a third insulating film(67).