METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device formation method is provided to improve the characteristic of the semiconductor device by fundamentally solving the problem that the bottom of the contact hole is not open. CONSTITUTION: A bottom metal layer(110) is formed on a semiconductor substrate. A sacrificial dielectric film(130) is formed on the upper part of the bottom metal layer. The first contact hole is formed on the sacrificial dielectric film. An insulation spacer(160) is formed on the sidewall of the first contact hole.