METHOD FOR NITRIDE SEMICONDUCTOR CRYSTAL GROWTH

摘要

PURPOSE: A nitride semiconductor crystal growing method is provided to improve the quality of crystal by removing the strain caused by the mask which may applied to the nitride semiconductor crystal. CONSTITUTION: A substrate having a plurality of crystal surface is arranged with the first crystal surface as the surface(S10). A mask pattern of the stripe pattern having the predetermined width and the period is formed on the first crystal surface(S20). A second crystal plane having the predetermined angle with the first crystal surface is exposed by etching the substrate(S30).