摘要 |
PURPOSE: A composition for wet etching is provided to minimize an etching rate to a silicon oxide layer, to selectively remove only the silicon oxide layer, and to ensure high-temperature stability. CONSTITUTION: A composition for wet etching a silicon oxide layer comprises 0.01-2 weight% of a silicon compound of chemical formula 1, 0.001-1 weight% of an oxime compound of chemical formula 2, and 97-99.98 weight% of phosphoric acids. In chemical formulas 1 and 2, R^1, R^2, R^3 and R^4 are independently selected from hydrogen, (C1-20)alkyl, (C1-20)alkoxy, (C2-20)alkenyl, (C3-20)cycloalkyl, amino(C1-20)alkyl, amino(C1-10)alkylamino(C1-10)alkyl, (C6-20)aryl, (C1-20)alkylcarbonyl, (C1-20)alkylcarbonyloxy and cyano(C1-10)alkyl.
|
申请人 |
TECHNO SEMICHEM CO., LTD. |
发明人 |
LIM, JUNG HUN;LEE, JIN UK;JEONG, CHAN JIN;LEE, BYUNG IL;PARK, SEONG HWAN |