| 摘要 |
A method of fabricating memory devices is provided. First, a charge storage structure including a gate dielectric structure is formed on the substrate in sequence to form a charge trapping layer. Then, a gate conductive layer is formed above the charge storage structure. Afterwards, the gate conductive layer and at least a part of the charge storage structure are patterned. The cross section of the patterned charge storage structure is then become a trapezoid or a trapezoid analogue, which has the shorter side near the gate conductive layer and the longer side near the substrate.
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