发明名称 |
Method and system for improving critical dimension proximity control of patterns on a mask or wafer |
摘要 |
A method for improving critical dimension uniformity of a substrate is provided. An equation based on a proximity trend of a pattern on a first substrate is determined. The equation is applied in a regression model to determine a parameter value of a second substrate. A recipe of an exposure equipment is adjusted based on the parameter value for exposure of the second substrate. Also, a system for controlling critical dimension of a pattern on a substrate is provided. The system includes an advance process control system for collecting exposure data of the substrate, and a regression model within the advance process control system for analyzing the exposure data and determining a parameter value of a recipe of the exposure tool. The regression model is operable to determine an equation based on a proximity trend of the substrate.
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申请公布号 |
US7923265(B2) |
申请公布日期 |
2011.04.12 |
申请号 |
US20070688141 |
申请日期 |
2007.03.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN CHENG-MING;CHIU JEN-HIS |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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