发明名称 Data writing and reading method for memory device employing magnetic domain wall movement
摘要 A method of data recording and reading for a memory device employing magnetic domain wall movement. The memory device includes a writing track, an interconnecting layer formed on the writing track, and a recording track formed on the interconnecting layer.
申请公布号 US7924594(B2) 申请公布日期 2011.04.12
申请号 US20100801094 申请日期 2010.05.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM CHEE-KHENG;KIM EUN-SIK
分类号 G11C19/00 主分类号 G11C19/00
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