发明名称 |
Resistive Memory Device and Manufacturing Method Thereof and Operating Method Thereof |
摘要 |
A method of manufacturing resistive memory includes the steps: forming a first implanted stacked structure having a first impurity diffusion layer, a second impurity diffusion layer, and a third impurity diffusion layer in a substrate; etching at least the first implanted stacked structure to form a plurality of second implanted stacked structures, wherein the first impurity diffusion layers are first signal lines; forming a plurality of first insulating layers between the second implanted stacked structures; etching the second implanted stacked structures to form a plurality of third implanted stacked structures, wherein the first signal lines are not etched; forming a plurality of second insulating layers between the third implanted stacked structures; forming a plurality of memory material layers electrically coupled to the third impurity diffusion layers; and forming a plurality of second signal lines perpendicular to the first signal lines and electrically coupled to the memory material layers.
|
申请公布号 |
US2011080766(A1) |
申请公布日期 |
2011.04.07 |
申请号 |
US20090574938 |
申请日期 |
2009.10.07 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHANG KUO-PIN;LUE HANG-TING;TSAI CHENG-HUNG |
分类号 |
H01L45/00;G11C11/00;H01L21/28 |
主分类号 |
H01L45/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|