发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND WAFER LAMINATION STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof, which prevent a damage of a corner part of a semiconductor chip, and also to provide a wafer lamination structure which is used for manufacturing of the semiconductor device. SOLUTION: A first semiconductor wafer W1 and a second semiconductor wafer W2 are joined keeping their surfaces faced with an underfill U held therebetween. After they are joined, a rear of the second semiconductor wafer W2 is ground. Through the grinding, the underfill U moved into a groove G2 is exposed in the rear of the semiconductor wafer W2. Thereafter, a rear of the first semiconductor wafer W1 is ground. Through the rear grinding, the underfill U moved into the groove G1 is exposed in the rear of the semiconductor wafer W1. Then, it is subjected to dicing on a dicing line L, and a semiconductor device is obtained. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011071441(A) 申请公布日期 2011.04.07
申请号 JP20090223266 申请日期 2009.09.28
申请人 ROHM CO LTD;RENESAS ELECTRONICS CORP 发明人 MORIFUJI TADAHIRO;SHIMAMOTO HARUO;MIYAZAKI CHUICHI;UEMATSU SHUNEI;ABE YOSHIYUKI
分类号 H01L25/065;H01L21/301;H01L21/304;H01L25/07;H01L25/18 主分类号 H01L25/065
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