| 摘要 |
In one embodiment, a method of removing film materials on an edge area of a substrate in a plasma etching apparatus is disclosed. The apparatus includes a chamber, a substrate support, a shield disposed with a gap on the substrate such that plasma is not generated therein while allowing an edge portion of the substrate to be exposed, and an antenna disposed on an outer wall of the chamber to apply plasma-generating power to an area between the edge portion of the substrate and an inner wall of the chamber. The method includes spraying a curtain gas to a space between the shield and the substrate, using a curtain gas passageway; and spraying a reaction gas to an area between a side surface of the shield and an inner sidewall of the chamber formed within the shield, using a reaction gas supply passageway.
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