NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide: a nitride semiconductor substrate having a main surface serving as a semipolar plane and provided with a chamfered portion effectively preventing cracking and chipping; a semiconductor device fabricated using the same; and methods for manufacturing them.

SOLUTION: The nitride semiconductor substrate 10a includes: a main surface 11 inclined at an angle of 71-79°from the (0001) plane in the [1-100] direction or inclined at an angle of 71 to 79°from the (000-1) plane in the [-1100] direction; and a chamfered portion located at an outer peripheral end of the main surface 11. The inclination angleθ1 orθ2 of the chamfered portion with respect to adjacent one of the main surface 11 and a back surface 21 located on the side opposite to the main surface 11 is 5-45°, thereby effectively suppressing the occurrence of cracking and chipping from the outer peripheral end of the nitride semiconductor substrate 10a.

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