| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an photodetector having high sensitivity, and to provide a method of manufacturing the same. <P>SOLUTION: The photodetector includes a lower electrode 1, an active layer 9 formed on the lower electrode 1, and an upper electrode 4 formed on the active layer 9. The active layer 9 includes barrier layers 2 and quantum well layers 3 lattice-matching the barrier layers 2. The barrier layers 2 and the quantum well layers 3 constitute a type II superlattice. The quantum well layer 3 includes first compound semiconductor layers 3a and 3c, and a second compound semiconductor layer 3b causing crystals of the first compound semiconductor layers 3a and 3c to generate lattice strain. <P>COPYRIGHT: (C)2011,JPO&INPIT |
