| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of transferring high voltage without trouble. SOLUTION: Each of a plurality of transfer transistors QNi includes: a gate electrode 203 formed on a semiconductor substrate 11 through a gate insulation film 202; a base diffusion region 201a formed in a surface of the substrate 11 located below the gate electrode 203; a drain diffusion region 201b formed in the surface of the substrate 11 adjacently to the base diffusion region 201a; and a source diffusion region 201c formed in the surface of the substrate 11 to sandwich the base diffusion region 201 along with the drain diffusion region 201b. In a region AR6 located above the base diffusion region 201a and above the source diffusion region 201c, an M0 wire 301f capable of providing a predetermined voltage for preventing the source diffusion region 201c from being depleted when transferring a voltage used for writing by the transfer transistor QNi is formed. COPYRIGHT: (C)2011,JPO&INPIT
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