发明名称 OPERATING AN EMULATED ELECTRICALLY ERASABLE (EEE) MEMORY
摘要 <p>An emulated electrically erasable memory system (10) includes a random access memory (RAM) (20) and a non-volatile memory (NVM) (26). A write access to the RAM is received which provides first write data and a first address, where the first write data is stored in the RAM at the first address, and a currently filling sector (38) of the NVM is updated to store both the first write data and the first address as a first record. In response to the write access, based on whether there are any remaining active records in an oldest filled sector (30) of the NVM, a portion of an erase process or a transfer of up to a predetermined number of active records from the oldest filled sector to the currently filling sector is performed. The predetermined number of active records is less than a maximum number of total records that may be stored within the oldest filled sector.</p>
申请公布号 WO2011041021(A1) 申请公布日期 2011.04.07
申请号 WO2010US44557 申请日期 2010.08.05
申请人 FREESCALE SEMICONDUCTOR INC.;SCOULLER, ROSS S.;ANDRE, DANIEL L.;MCGINTY, STEPHEN F. 发明人 SCOULLER, ROSS S.;ANDRE, DANIEL L.;MCGINTY, STEPHEN F.
分类号 G06F12/02;G06F13/16 主分类号 G06F12/02
代理机构 代理人
主权项
地址
您可能感兴趣的专利