发明名称 |
OPERATING AN EMULATED ELECTRICALLY ERASABLE (EEE) MEMORY |
摘要 |
<p>An emulated electrically erasable memory system (10) includes a random access memory (RAM) (20) and a non-volatile memory (NVM) (26). A write access to the RAM is received which provides first write data and a first address, where the first write data is stored in the RAM at the first address, and a currently filling sector (38) of the NVM is updated to store both the first write data and the first address as a first record. In response to the write access, based on whether there are any remaining active records in an oldest filled sector (30) of the NVM, a portion of an erase process or a transfer of up to a predetermined number of active records from the oldest filled sector to the currently filling sector is performed. The predetermined number of active records is less than a maximum number of total records that may be stored within the oldest filled sector.</p> |
申请公布号 |
WO2011041021(A1) |
申请公布日期 |
2011.04.07 |
申请号 |
WO2010US44557 |
申请日期 |
2010.08.05 |
申请人 |
FREESCALE SEMICONDUCTOR INC.;SCOULLER, ROSS S.;ANDRE, DANIEL L.;MCGINTY, STEPHEN F. |
发明人 |
SCOULLER, ROSS S.;ANDRE, DANIEL L.;MCGINTY, STEPHEN F. |
分类号 |
G06F12/02;G06F13/16 |
主分类号 |
G06F12/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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