| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device and a method of making the same, capable of improving an S/N ratio. <P>SOLUTION: The solid-state imaging device includes a plurality of pixels portions. Each pixel portion includes: a pixel electrode; an organic layer including a photoelectric conversion layer provided above the pixel electrode; a counter electrode provided above the organic layer and shared by the plurality of pixel portions; a sealing layer; a color filter; and a readout circuit for reading out a signal corresponding to the charges captured by the pixel electrode. The photoelectric conversion layer contains an organic p-type semiconductor and an organic n-type semiconductor. The organic layer further includes a charge blocking layer for suppressing injection of charges from the pixel electrode and/or the counter electrode to the photoelectric conversion layer, between the photoelectric conversion layer and the pixel electrode and/or the counter electrode. An ionization potential of the charge blocking layer and an electron affinity of the organic n-type semiconductor in the photoelectric conversion layer has a difference of≥1 eV. A partition wall is provided between adjacent color filters in the plurality of pixel portions, and the material of the partition walls has a refractive index lower than that of the material of the color filter and is transparent. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
