发明名称 METHOD OF MANUFACTURING FERROELECTRIC DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric device (a power generation device or pyroelectric device) improving crystallinity and performance of a ferroelectric film regardless of a substrate material of the ferroelectric device. <P>SOLUTION: A piezoelectric layer (ferroelectric film) 24b is formed on one surface side of a piezoelectric layer formation substrate (second substrate) 40 excelling in a lattice matching property with the piezoelectric layer 24b in comparison to an element formation substrate (first substrate) 20a; thereafter a lower electrode 24a is formed on the piezoelectric layer 24b; subsequently, the lower electrode 24a on the one surface side of the piezoelectric layer formation substrate 40 is jointed to the element formation substrate 20 through a joint layer 51, thereafter the piezoelectric layer formation substrate 40 is removed, and thereby the lower electrode 24a and the piezoelectric layer 24b are transferred to the element formation substrate 20a. Thereafter, an upper electrode 24c is formed on the one surface side of the element formation substrate 20a, thereby a power generation part 24 is formed, and thereafter a cantilever formation substrate 20 including a frame part 21, a cantilever part 22 and a weight part 23 is formed by processing the element formation substrate 20a. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011071467(A) 申请公布日期 2011.04.07
申请号 JP20100056707 申请日期 2010.03.12
申请人 PANASONIC ELECTRIC WORKS CO LTD 发明人 MATSUSHIMA CHOMEI;YAMAUCHI NORIHIRO;AIZAWA KOICHI;JINNO ISAKU
分类号 H01L41/113;B81C99/00;H01L41/18;H01L41/187;H01L41/22;H01L41/313;H01L41/319;H02N2/00;H02N2/18 主分类号 H01L41/113
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