发明名称 |
METHOD FOR PRODUCING NITRIDE CRYSTAL, NITRIDE CRYSTAL AND APPARATUS FOR PRODUCING THE SAME |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for efficiently growing a high-purity nitride crystal with low oxygen concentration by means of an ammonothermal method. <P>SOLUTION: The method for producing a nitride crystal includes: bringing a reactive gas which reacts with ammonia to produce a mineralizer into contact with ammonia in a reaction chamber 1 or in a closed circuit connected to the reaction chamber 1 to produce a mineralizer; and in the presence of the ammonia and the mineralizer, growing a nitride crystal from a crystal growth raw material 5 comprising a nitride placed in the reaction chamber 1 by an ammonothermal method. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
申请公布号 |
JP2011068545(A) |
申请公布日期 |
2011.04.07 |
申请号 |
JP20100002145 |
申请日期 |
2010.01.07 |
申请人 |
MITSUBISHI CHEMICALS CORP;TOHOKU UNIV |
发明人 |
MIKAWA YUTAKA;KIYOMI MAKIKO;KAGAMITANI YUJI;ISHIGURO TORU |
分类号 |
C30B29/38;C30B7/10 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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