发明名称 METHOD FOR PRODUCING NITRIDE CRYSTAL, NITRIDE CRYSTAL AND APPARATUS FOR PRODUCING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for efficiently growing a high-purity nitride crystal with low oxygen concentration by means of an ammonothermal method. <P>SOLUTION: The method for producing a nitride crystal includes: bringing a reactive gas which reacts with ammonia to produce a mineralizer into contact with ammonia in a reaction chamber 1 or in a closed circuit connected to the reaction chamber 1 to produce a mineralizer; and in the presence of the ammonia and the mineralizer, growing a nitride crystal from a crystal growth raw material 5 comprising a nitride placed in the reaction chamber 1 by an ammonothermal method. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011068545(A) 申请公布日期 2011.04.07
申请号 JP20100002145 申请日期 2010.01.07
申请人 MITSUBISHI CHEMICALS CORP;TOHOKU UNIV 发明人 MIKAWA YUTAKA;KIYOMI MAKIKO;KAGAMITANI YUJI;ISHIGURO TORU
分类号 C30B29/38;C30B7/10 主分类号 C30B29/38
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