发明名称 |
MEMORY SYSTEMS AND METHODS OF DETECTING DISTRIBUTION OF UNSTABLE MEMORY CELLS |
摘要 |
A circuit is operated to detect unstable memory cells from among a plurality of memory cells in at least one page. A determination is made from an initial status of data stored in a memory cell whether no read error occurs when the data is read at a standard read voltage level, whether a read error occurs and the read error is correctable, and whether a read error occurs and the read error is uncorrectable. Responsive to determining that a read error occurs that is correctable, a further determination is made as to whether the memory cell is correctable by reading the data stored in the memory cell at a correction read voltage level, which has a different voltage level from the standard read voltage level, and by determining whether a read error occurring in the data read at the correction read voltage level is correctable or uncorrectable.
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申请公布号 |
US2011083039(A1) |
申请公布日期 |
2011.04.07 |
申请号 |
US20100774340 |
申请日期 |
2010.05.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SEON-TAEK;KYUNG YOON-YOUNG |
分类号 |
G06F11/28;G06F11/00;G06F11/10;H03M13/05 |
主分类号 |
G06F11/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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