| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory that improves characteristics by preventing power consumption; and to provide a method of manufacturing the same. <P>SOLUTION: The nonvolatile memory device includes a memory cell 80a that is connected to a first interconnection 10 and second interconnection 11. The memory cell 80a has a plurality of layers. The plurality of layers include: a resistance change film 24, which is a memory layer; and a carbon nanotube-containing layer 23 that contacts with the memory layer and contains a plurality of carbon nanotubes 23c, which in turn functions as an electrode of the resistance change film 24. <P>COPYRIGHT: (C)2011,JPO&INPIT |
