| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that simultaneously forms a MOS transistor including a relatively thick gate insulating film and the MOS transistor including the relatively thin gate insulating film, and to provide a method of manufacturing the semiconductor device. <P>SOLUTION: In the semiconductor device, the effect of a narrow channel effect generated when the channel width of the MOS transistor is designed in a short size can be suppressed without being subjected to the effect of the variations of the film thicknesses of field insulating films, the variations of the etchings of the relatively thick first gate insulating films 24 and the fluctuations of the concentrations of channel ends due to inversion preventive diffusion layers, by offsetting channel regions 33 for the MOS transistor including the relatively thin gate insulating films 25 from the inversion preventive diffusion layers 31 formed to the lower parts of the field insulating films by coating field insulating film ends 23 in a region forming the MOS transistor including the relatively thin gate insulating films 25 with the relatively thick gate insulating films 24, and element characteristics are stabilized. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
