发明名称 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATION METHOD
摘要 A semiconductor device fabrication method, comprising the steps of: forming a solder portion on an electrode of a substrate on which a semiconductor chip is to be mounted; applying a resin layer onto the substrate to a thickness such that a top region of the solder portion is exposed; curing the resin layer; providing a thermosetting underfill material over a region where the semiconductor chip is to be mounted; placing an electrode of the semiconductor chip face down on the solder portion in such a manner that the electrode faces the solder portion; and heating the underfill material and the solder portion.
申请公布号 US2011079896(A1) 申请公布日期 2011.04.07
申请号 US20100892029 申请日期 2010.09.28
申请人 FUJITSU LIMITED 发明人 SATOH YOSHIYUKI;KOBAE KENJI;NAKAMURA KIMIO;MATSUMURA TAKAYOSHI;ISHIKAWA KUNIKO
分类号 H01L23/488;H01L21/44 主分类号 H01L23/488
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