| 摘要 |
<p>A thin-film diode (10A) provided to the disclosed semiconductor device has: a semiconductor layer having a first, a second, and a third semiconductor region; insulating layers (22A, 23A) formed on the semiconductor layer; and a first and a second contact hole that penetrate the insulating layers (22A, 23A). The first semiconductor region has a first conductive impurity at a first concentration, the second semiconductor region has a second conductive impurity that is different from the first conductive impurity at a second concentration, and the third semiconductor region has either the first conductive impurity at a third concentration that is lower than the first concentration or the second conductive impurity at a third concentration that is lower than the second concentration. The first semiconductor region is aligned with the first contact hole, or alternately, the second semiconductor region is aligned with the second contact hole.</p> |
