| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce chipping, crack or break which are generated in a semiconductor chip at the time of dicing. <P>SOLUTION: In a semiconductor device 80, a semiconductor chip 50 is mounted on a glass substrate 60 in the form of Face Down, and the semiconductor chip 50 and the glass substrate 60 are bonded by an adhesive layer 10. In the semiconductor chip 50, there are provided a silicon substrate 1, an integrated circuit 2, an euphotic section 3, an interlayer insulating film 4, a resin layer 5, a front surface electrode 6, a through electrode 8, a rear surface electrode 9, a rear surface protective film 12, and a ball terminal 13. The resin layer 5 is provided at an edge of the semiconductor chip 50 so as to touch the interlayer insulating film 4 on the silicon substrate 1. The resin layer 5 is provided in an opening region where the interlayer insulating film 4 is etched. The semiconductor device 80 is formed by blade dicing a silicon wafer 100 and glass substrate 60 adhered by the adhesive layer 10 into pieces. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
