SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a compound semiconductor high-electron-mobility transistor that has superior heat dissipation and is usable at high-frequency, and has high-output performance. SOLUTION: The compound semiconductor high-electron-mobility transistor is configured by laminating a channel layer 40 and a barrier layer 50 on a first principal surface 20a of a support substrate 20, wherein a region part of the support substrate which includes a region where a source electrode 62 is formed is composed of a metal part 22, and the other region part of the support substrate which includes a region where a drain electrode 64 is formed is composed of a silicon part 24. COPYRIGHT: (C)2011,JPO&INPIT