| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, wherein the thickness of the semiconductor device can be made small by reducing the occurrence of warpage due to stress of a film formed on a semiconductor substrate. SOLUTION: The semiconductor device 1A (1) includes: a semiconductor substrate 10 arranged with a semiconductor device on one surface side; a semiconductor package structure having an insulating layer 11 arranged in a region matching the semiconductor device on the one surface side of the semiconductor substrate, and a rewiring layer 12; and a reinforcing layer 20 arranged to cover at least the semiconductor package structure on the one surface side of the semiconductor substrate. COPYRIGHT: (C)2011,JPO&INPIT
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