NONVOLATILE MEMORY DEVICES AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A non-volatile memory device and manufacturing method thereof are provided to prevent charges in a charge storage film from being spread. CONSTITUTION: A stack structure includes vertically stacked conductive lines. The stack structure includes interlayer insulating film patterns(122,124) between the conductive lines. A semiconductor pattern(200) penetrates the stack structure and is connected to the semiconductor substrate. An information storage film(230) is formed between the semiconductor pattern and the conductive lines. A fixed charge layer(142) is arranged between the semiconductor pattern and the interlayer insulating film patterns.