THE MANUFACTURING METHODS OF TARGET WITH HIGH DENSITY AND CONDUCTIBILITY BY USING DOPED-ZINC OXIDE AND DOPED-TIN OXIDE IN INDIUM -ZINC -TIN OXIDE SYSTEM

摘要

PURPOSE: Target composition of indium oxide-zinc oxide-tin oxide of high density and high conductivity using doped indium oxide, tin oxide, and a manufacturing method thereof are provided to reduce indium and to manufacture a target of high density and high conductivity by supplying target composition of In2O3-ZnO-SnO2 based oxide and by doping trivalent ZnO and pentavalent SnO2. CONSTITUTION: Target composition of indium oxide-zinc oxide-tin oxide of high density and high conductivity using doped indium oxide, tin oxide consists of ZnO of 10~35 weight%, SnO2 of 5~20 weight%, and In2O3. For the ZnO, one of B, Al, Ga, Sb, and Y, which are trivalent elements, is contained as a dopant by 4 weight%. For the SnO2, one of P, As, Nb, and Ta, which are pentavelent elements, is contained as a dopant by 4 weight%. The diameter of the composition is 0.3μm or less. The composition is plasticized under a furnace of oxygen atmosphere at a temperature of 1500°C~1640°C for 5 hours.