| 摘要 |
PURPOSE: A system and method for etching a polysilicon thin film are provided to efficiently eliminate a natural oxide film, thereby drastically lowering a defective rate during a process for eliminating a natural oxide film. CONSTITUTION: A polysilicon film is formed on a substrate(100). A support unit(300) tilts toward the substrate. An etching solution supply unit(200) supplies an etching solution onto or to the substrate. The etching solution supply unit includes a mixing unit(210) and an etching solution discharging unit(220). The etching solution discharging unit functions as a path through which a uniform etching solution flows to the substrate.
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