| 摘要 |
<p>A light emitting device comprising:
a first nitride semiconductor layer(407);
an active layer(411) on the first nitride semiconductor layer(407);
a second nitride semiconductor layer(413) on the active layer(411); and
characterized in that the active layer(411) includes a quantum well structure for emitting light,
the first nitride semiconductor layer(407) includes a super lattice structure having at least two layers, and
the second nitride semiconductor layer(413) includes a p-type impurity, the p-type impurity having a doping profile comprising a plurality of peaks through the depth of the second nitride semiconductor layer(413).</p> |
