发明名称 Light-emitting diode with a finely roughened structure
摘要 A light-emitting diode having a finely roughened structure on a surface of an inorganic light permeable layer formed on a surface of the outermost layer of a light-emitting side or on the outermost layer at the light-emitting side of the semiconductor layer constituting the light-emitting diode, the surface having a surface property including the following two conditions: (1) the mean radius of gyration <R> of projections in the roughened surface structure is 1/20 to 1/2 of the light wavelength, and dispersion sigma R of the radius of gyration is 1.05 to 2, wherein <R> is represented by <R> = £R 2 n R /£Rn R where n R denotes the number of projections having an arbitrary radius of gyration, and sigma R is represented by sigma R = <R>/(£Rn R /£n R ); and (2) the mean height <H> of projections in the roughened surface structure is 1/10 to 1 of the light wavelength, and dispersion sigma H of height of the projection is 1.05 to 2, wherein <H> is represented by <H> = £H 2 n H /£Hn H where n H denotes the number of projections having an arbitrary height, and sigma H = <H>/(£Hn H /£n H ).
申请公布号 EP2306527(A1) 申请公布日期 2011.04.06
申请号 EP20100015857 申请日期 2002.12.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ASAKAWA, KOJI;FUJIMOTO, AKIRA;SUGIYAMA, HITOSHI;OHASHI, KENICHI;SUZUKI, KEIJI;TONOTANI, JUNICHI
分类号 H01L33/22;H01L21/027 主分类号 H01L33/22
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