| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrode contact structure capable of attaining ohmic contact by suppressing formation of a non-uniform crystal phase. SOLUTION: The electrode contact structure includes an epitaxial layer 100, a contact metal electrode 120 formed on the epitaxial layer 100, an interlayer insulating film 140 having a contact hole, a diffusion barrier layer 200 formed on the contact metal electrode 120 and having crystal orientation property matching the crystal orientation property of the contact metal electrode, and an Al wiring 160 formed on the diffusion barrier layer 200. The electrode contact structure is used as a structure for a cathode electrode or a gate electrode of a self-scanning type light-emitting element array. COPYRIGHT: (C)2011,JPO&INPIT
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