| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor-phase growth device capable of securing a uniform flow of purge gas with respect to all directions around a rotary shaft without depending on accuracy in assembly, and protecting device components such as a heater and the rotary shaft from generation of extraneous matter due to a material gas and corrosion due to gas, and a vapor-phase growth method. SOLUTION: In this vapor-phase growth device, a substrate 3 is heated by a heater 42 while rotating a rotary shaft 5 attached to a susceptor 4 in a reactor to perform film formation by a material gas on the substrate 3 and the like. A heater unit 40A for housing at least a part of the rotary shaft 5 and the heater therein is arranged in the reactor, and a purge gas is exhausted into the reactor from a purge gas exhaust port 46A by introducing the purge gas into the heater unit 40A. The purge gas exhaust port 46A is formed by a space between a heater cover 44 fixed and erected on a heater support base 41 constituting at least a floor of the heater unit 40A and supported by the rotary shaft 5 and the susceptor 4. COPYRIGHT: (C)2011,JPO&INPIT
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