| 摘要 |
PURPOSE: A light emitting diode and a manufacturing method thereof are provided to improve heat extraction effect by increasing the area of a metal electrode for driving the light emitting diode. CONSTITUTION: A buffer layer(42) is formed on a substrate(41). A first nitride gallium layer(43) with an uneven shape is formed on the buffer layer. A first conductive nitride gallium layer, an active layer(45), and a second conductive type nitride gallium layer(47) are formed on the first nitride gallium layer. A first metal electrode(48) is formed on the side and the bottom of a second conductive type nitride gallium layer. An insulation layer(49) is formed on the second conductive type nitride gallium layer.
|
