| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device suppressed in a crystal defect in an n-type MOSFET while keeping a characteristic of a p-type MOSFET, and to provide a method for manufacturing the same. SOLUTION: The semiconductor device includes: an element-isolation insulating film 30 formed on a major surface 10a of a semiconductor layer 10, and having a first opening 38N and a second opening 38P; an n-type MOSFET 101N provided in the first opening; and a p-type MOSFET 101P provided in the second opening. An upper face 35N of a portion of the element-isolation insulating film, adjacent to a first source region 21N and a first drain region 22N of the n-type MOSFET, is positioned below an upper face 25N of the first source region and the first drain region. An upper face 35P of a portion of the element-isolation insulating film, adjacent to a second source region 21P and a second drain region 22P of the p-type MOSFET, is positioned above an upper face 25P of the second source region and the second drain region. COPYRIGHT: (C)2011,JPO&INPIT
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