发明名称 SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS
摘要 Embodiments of the invention include sensors comprising high electron mobility transistors (HEMTs) with capture reagents on a gate region of the HEMTs. Example sensors include HEMTs with a thin gold layer on the gate region and bound antibodies; a thin gold layer on the gate region and chelating agents; a non-native gate dielectric on the gate region; and nanorods of a non-native dielectric with an immobilized enzyme on the gate region. Embodiments including antibodies or enzymes can have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.
申请公布号 US2011074381(A1) 申请公布日期 2011.03.31
申请号 US20100966531 申请日期 2010.12.13
申请人 UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. 发明人 REN FAN;PEARTON STEPHEN JOHN;LELE TANMAY
分类号 G01N27/26;H01L29/778 主分类号 G01N27/26
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