| 摘要 |
An epitaxial growth susceptor having a pocket that horizontally supports a single-crystal substrate in an epitaxial growth apparatus in which the pocket has an outer peripheral region with which the single-crystal substrate comes into contact to be supported; and a central region that is surrounded by the outer peripheral region and does not come into contact with the single-crystal substrate, one or more through holes that pierce the epitaxial growth susceptor are formed in the central region of the pocket, and the outer peripheral region of the pocket has a tapered shape that is inclined with a tilt angle that is greater than 0° and less than 1° in such a manner that a depth increases toward the central region, and also has a horizontal width that is 3.3% or more of a diameter of the single-crystal substrate to be supported.
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