| 摘要 |
A ferroelectric memory is constituted to comprise a capacitor being formed above a semiconductor substrate (61) and having a ferroelectric film (78) held between a lower electrode (77) and an upper electrode (79), a W plug (72b) electrically connected on its upper surface with the lower electrode (77), and a protective film (76) formed between the W plug (72b) and the lower electrode (77) and made of at least any one kind out of a conductive oxide, a conductive nitride, and a conductive oxynitride. The protective film (76) prevents an orientation of the lower electrode (77) from depending on the W plug (72b), thereby making the orientation of the lower electrode (77) uniform. Accordingly, it is possible to make an orientation of the ferroelectric film (78) to be formed on the lower electrode (77) uniform, which enables to improve an electric characteristic of the ferroelectric capacitor. |
