| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide improved structures of a plurality of transistors and manufacturing processes thereof. <P>SOLUTION: A complimentary metal oxide semiconductor (CMOS) device 100 includes a PMOS transistor having at least two first gate electrodes each having a first parameter, and an NMOS transistor having at least two second gate electrodes each having a second parameter, wherein the second parameter is different from the first parameter. The first parameter and the second parameter may include the thickness or the dopant profile of the gate electrode materials 120 of the PMOS and NMOS transistors. The first and second parameters of the at least two first gate electrodes and the at least two second gate electrodes define the work function of the PMOS and NMOS transistors, respectively. <P>COPYRIGHT: (C)2011,JPO&INPIT |
