| 摘要 |
PROBLEM TO BE SOLVED: To reduce energy consumed in a heater electrode in phase change to reduce power consumption of a phase-change memory device. SOLUTION: A method for fabricating a phase-change memory device includes steps of: forming a heater electrode 32 in an interlayer insulating film 30 to penetrate through the interlayer insulating film 30; forming insulating layers 40a, 40b on the interlayer insulating film 30 in which the heater electrode 32 is formed; forming a tapered hole 42 in the insulating layers 40a, 40b to penetrate the insulating layers 40a, 40b and expose a center of a top surface of the heater electrode 32; thinning the insulating layer 40b by removing a part 40b of the insulating layers in which the hole 42 is formed; and forming a phase-change layer 41 on the insulating layer 40a to embed the hole 42 after thinning the insulating layer 40b. COPYRIGHT: (C)2011,JPO&INPIT
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