发明名称 Halbleiter-Leistungs-Modul
摘要 <p>In an IGBT module which contains an IGBT device and a diode device connected to each other and accommodated in a case and which radiates heat generated in operation through a radiation board, an object is to reduce the area of the module in the lateral direction to achieve size reduction. The collector electrode (32) surface of an IGBT device (28) is provided on a radiation board (26), and an element connecting conductor (35) is bonded with conductive resin (36) on the emitter electrode (30) surface. The anode electrode (33) surface of a diode device (29) is bonded on it with the conductive resin (36). The IGBT device (28) and the diode device (29) are thus stacked and connected in the vertical direction.</p>
申请公布号 DE69943196(D1) 申请公布日期 2011.03.31
申请号 DE1999643196 申请日期 1999.11.29
申请人 MITSUBISHI DENKI K.K. 发明人 MUTO, HIROTAKA;OHI, TAKESHI;KIKUCHI, TAKUMI;KIKUNAGA, TOSHIYUKI
分类号 H01L25/07;H01L25/065;H01L25/18;H02M7/00 主分类号 H01L25/07
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