| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that reduces a leakage current of a second transistor that is part of a peripheral circuit for writing and erasing with respect to a memory cell of a DRAM or to a DRAM while keeping a high level of on-state current of a first transistor constituting a logic circuit, and to provide a method of manufacturing the semiconductor device. <P>SOLUTION: The semiconductor device includes a first transistor 100 having a first gate insulating film 110, a first gate electrode 120, and a first sidewall 150, and a second transistor 200 having a second gate insulating film 210, a second gate electrode 220, and a second sidewall 250. A capacitive element 300 is connected to one side of source and drain regions 240 of the second transistor 200. The first gate insulating film 110 has the same thickness as that of the second gate insulating film 210, and the first gate electrode 120 has the same thickness of that of the second gate electrode 220. The width of the second sidewall 250 is larger than the width of the first sidewall 150. <P>COPYRIGHT: (C)2011,JPO&INPIT |
