| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing complication of a manufacturing process while suppressing a surge of a sense current, and to provide a method of manufacturing the same. <P>SOLUTION: A first semiconductor element part SX is provided with a first channel surface having a first plane direction and is used for switching a first current. A first region of a semiconductor layer is provided with a first trench having a first channel surface. A first gate insulating film covers the first channel surface at a first thickness. A second semiconductor element part SY is provided with a second channel surface having a second plane direction different from the first plane direction and is used for switching a second current smaller than the first current. A second region of the semiconductor layer is provided with a second trench having a second channel surface. A second gate insulating film covers the second channel surface at a second thickness larger than the first thickness. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
