| 摘要 |
A laser diode epitaxial wafer includes an n-type GaAs substrate, an n-type cladding layer formed on the n-type GaAs substrate, an active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the active layer. The n-type cladding layer, the active layer, and the p-type cladding layer include an AlGaInP-based material. The p-type cladding layer has carbon as a p-type impurity. The p-type cladding layer has a carrier concentration between 8.0×1017 cm−3 and 1.5×1018 cm−3.
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