发明名称 |
Method of fabricating T-gate |
摘要 |
A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.
|
申请公布号 |
US7915106(B2) |
申请公布日期 |
2011.03.29 |
申请号 |
US20080270016 |
申请日期 |
2008.11.13 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
SHIM JAE YEOB;YOON HYUNG SUP;KANG DONG MIN;HONG JU YEON;LEE KYUNG HO |
分类号 |
H01L21/338;H01L21/28;H01L21/44 |
主分类号 |
H01L21/338 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|