| 摘要 |
In a method of manufacturing a non-volatile memory device, a conductive structure is formed on a substrate. The conductive structure includes a tunnel oxide pattern, a first conductive pattern, a pad oxide pattern and a hard mask pattern. A trench is formed on the substrate using the conductive structure as an etching mask. An inner oxide layer is formed on an inner wall of the trench and sidewalls of the tunnel oxide pattern and the first conductive pattern. The inner oxide layer is cured, thereby forming a silicon nitride layer on the inner oxide layer. A device isolation pattern is formed in the trench, and the hard mask pattern and the pad oxide pattern are removed from the substrate. A dielectric layer and a second conductive pattern are formed on the substrate. Accordingly, the silicon nitride layer prevents hydrogen (H) atoms from leaking into the device isolation pattern.
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