发明名称 Method of making a diode read/write memory cell in a programmed state
摘要 A method of making a nonvolatile memory device includes fabricating a diode in a low resistivity, programmed state without an electrical programming step. The memory device includes at least one memory cell. The memory cell is constituted by the diode and electrically conductive electrodes contacting the diode.
申请公布号 US7915094(B2) 申请公布日期 2011.03.29
申请号 US20090588088 申请日期 2009.10.02
申请人 SANDISK 3D LLC 发明人 KUMAR TANMAY;HERNER S. BRAD
分类号 H01L21/82 主分类号 H01L21/82
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