Data writing and reading method for e.g. flash memory in chip card, involves reading wear counter from temporary information structure after metadata page is erased, incrementing read counter, and programming incremented counter in page

摘要

The method involves attributing, to a metadata page, a wear counter containing a value representative of a number of times that the metadata page is erased, and arranging the counter inside the page. A temporary information structure is written in a zone (A2) of a nonvolatile memory (NVM) before erasing the page, where the structure has an address (MPPA) of the page in the zone and the counter. The wear counter is read from the structure after the page is erased. The read wear counter is incremented, and the incremented wear counter is programmed in the page. An independent claim is also included for an integrated circuit comprising a processing unit.