SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus for manufacturing a crystal silicon having different particle sizes, using a thermal plasma jet. SOLUTION: When a piezoelectric element 2 sets a distance between a jetting port 18 and a substrate 60 at 1 mm, a plasma source 10 generates a thermal plasma jet, and irradiates an a-Si:H film 61 with the thermal plasma jet TPJ from the jetting port 18 having a diameter 300μmϕ. In this way, a part of the a-Si:H film 61 is melted and crystallized. After that, when the piezoelectric element 2 sets a distance between the jetting port 18 and the substrate 60 at 5 mm, the plasma source 10 generates a thermal plasma jet, and irradiates the a-Si:H film 61 with the thermal plasma jet TPJ from the jetting port 18. In this way, a part of the a-Si:H film 61 becomes solid phase and crystallized. COPYRIGHT: (C)2011,JPO&INPIT