| 摘要 |
Provided is a light emitting diode having red and infrared luminous wavelengths, excellent monochromacity, high power, high efficiency and excellent moisture resistance. The light emitting diode is equipped with a well layer expressed by the composition formula (Alx1Ga1-x1) As(0=x1=1), an active layer that emits infrared light and that has a laminated layer with a barrier layer expressed by the composition formula (Alx2Ga1-x2)As(0<x2=1), a light emitting part having a first and second cladding layer sandwiching the active layer, a current diffusion layer formed on top of the light emitting part, and a functional substrate bonded to the current diffusion layer. The light emitting diode is characterised in that the first and second cladding layers are expressed by the composition formula (Alx3Ga1-x3)y1In1-y1P(0=x3=1, 0<y=1). |
