| 摘要 |
The present invention discloses an isolated SCR ESD device, comprising: a substrate; a first well located in the substrate, which is floating and has a first conductivity type; a first high density doped region located in the first well and having a second conductivity type; a second well nearby the first well and having the second conductivity type; a second high density doped region located in the second well and having the second conductivity type; and a third high density doped region located in the second well and having the first conductivity type, wherein the first high density doped region is for electrical connection with a pad, and wherein the first well is not provided with a high density doped region having the first conductivity type for connection with the pad.
|
